BFP460 aug-04-2004 1 npn silicon rf transistor* ? for low voltage / low current applications ? ideal for vco modules and low noise amplifiers ? low noise figure: 1.1 db at 1.8 ghz ? excellent esd performance typical value > 1500v (hbm) ? high f t of 22 ghz * short-term description vps05605 4 2 1 3 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFP460 abs 1 = e 2 = c 3 = e 4=b - - sot343 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 4.5 4.2 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 1.5 collector current i c 50 ma base current i b 5 total power dissipation 1)2) t s 100c p tot 200 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 3) r thjs 250 k/w 1 p tot due to maximum ratings 2 t s is measured on the collector lead at the soldering point to the pcb 3 for calculation of r thja please refer to application note thermal resistance
BFP460 aug-04-2004 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5.8 - v collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0,5 v, i c = 0 i ebo - - 1 a dc current gain i c = 20 ma, v ce = 3 v, pulse measured h fe 90 120 160 -
BFP460 aug-04-2004 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 1 ghz f t 16 22 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, emitter grounded c cb - 0.32 0.45 pf collector emitter capacitance v ce = 3 v, f = 1 mhz, base grounded c ce - 0.28 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, collector grounded c eb - 0.55 - noise figure i c = 5 ma, v ce = 3 v, z s = z sopt , f = 1.8 ghz i c = 5 ma, v ce = 3 v, z s = z sopt , f = 3 ghz f - - 1.1 1.35 - - db power gain, maximum stable 1) i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 17.5 - db power gain, maximum available 1) i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - 12.5 - db transducer gain i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 1,8 ghz i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 3 ghz | s 21e | 2 - - 15 10.5 - - db third order intercept point at output 2) v ce = 3 v, i c = 20 ma, f = 1.8 ghz ip 3 - 27.5 - dbm 1db compression point at output i c = 20 ma, v ce = 3 v, f = 1.8 ghz p -1db - 11.5 - 1 g ma = | s 21 / s 12 | (k-(k2-1) 1/2 ), g ms = ? s 21 / s 12 ? 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
BFP460 aug-04-2004 4 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 2 4 6 8 10 v 14 v cb 0 0.1 0.2 0.3 0.4 0.5 pf 0.7 c cb third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 1800mhz - 0 10 20 30 40 ma 55 i c 5 7 9 11 13 15 17 19 21 23 25 27 29 dbm 33 i p3 1v 2v 3v 4v transition frequency f t = ? ( i c ) f = 1 ghz v ce = parameter in v 0 10 20 30 40 ma 60 i c 4 6 8 10 12 14 16 18 20 ghz 24 f t 3-4v 2v 1v power gain g ma , g ms , | s 21 | 2 = ? ( f ) v ce = 3 v, i c = 20 ma 0 1 2 3 4 ghz 6 f 0 5 10 15 20 25 30 35 40 db 50 g gms gma |s21|2
BFP460 aug-04-2004 5 power gain g ma , g ms = ? ( i c ) v ce = 3v f = parameter in ghz 0 10 20 30 40 ma 60 i c 4 6 8 10 12 14 16 18 20 db 24 g 0.9 1.8 2.4 3 4 5 6 power gain g ma , g ms = ? ( v ce ) i c = 20 ma f = parameter in ghz 0.5 1 1.5 2 2.5 3 3.5 v 4.5 v ce 4 6 8 10 12 14 16 18 20 db 24 g 0.9 1.8 2.4 3 4 5 6
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